JPH0126549B2 - - Google Patents

Info

Publication number
JPH0126549B2
JPH0126549B2 JP58150120A JP15012083A JPH0126549B2 JP H0126549 B2 JPH0126549 B2 JP H0126549B2 JP 58150120 A JP58150120 A JP 58150120A JP 15012083 A JP15012083 A JP 15012083A JP H0126549 B2 JPH0126549 B2 JP H0126549B2
Authority
JP
Japan
Prior art keywords
emitter
thyristor
electrode
turn
cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58150120A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5951571A (ja
Inventor
Shupenke Eebaaharuto
Shutoizuiiku Mihyaeru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of JPS5951571A publication Critical patent/JPS5951571A/ja
Publication of JPH0126549B2 publication Critical patent/JPH0126549B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/73—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for DC voltages or currents
    • H03K17/732—Measures for enabling turn-off

Landscapes

  • Thyristors (AREA)
JP58150120A 1982-08-18 1983-08-17 タ−ンオフ可能なサイリスタ Granted JPS5951571A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3230760.8 1982-08-18
DE3230760A DE3230760A1 (de) 1982-08-18 1982-08-18 Abschaltbarer thyristor

Publications (2)

Publication Number Publication Date
JPS5951571A JPS5951571A (ja) 1984-03-26
JPH0126549B2 true JPH0126549B2 (en]) 1989-05-24

Family

ID=6171157

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58150120A Granted JPS5951571A (ja) 1982-08-18 1983-08-17 タ−ンオフ可能なサイリスタ

Country Status (4)

Country Link
US (1) US4884114A (en])
EP (1) EP0104390B1 (en])
JP (1) JPS5951571A (en])
DE (2) DE3230760A1 (en])

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0389862A3 (de) * 1989-03-29 1990-12-19 Siemens Aktiengesellschaft Abschaltbarer Thyristor
US5381025A (en) * 1989-08-17 1995-01-10 Ixys Corporation Insulated gate thyristor with gate turn on and turn off
WO1991003078A1 (en) * 1989-08-17 1991-03-07 Ixys Corporation Insulated gate thyristor with gate turn on and turn off
ATE359842T1 (de) * 1991-07-02 2007-05-15 Nektar Therapeutics Abgabevorrichtung für nebelförmige medikamente
JP2944840B2 (ja) * 1993-03-12 1999-09-06 株式会社日立製作所 電力用半導体装置
DE4403431A1 (de) * 1994-02-04 1995-08-10 Abb Management Ag Abschaltbares Halbleiterbauelement
US6127723A (en) * 1998-01-30 2000-10-03 Sgs-Thomson Microelectronics, S.R.L. Integrated device in an emitter-switching configuration
KR102223095B1 (ko) * 2020-10-26 2021-03-04 전은혜 지방분해주사용 약학적 조성물 및 그의 용도

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1317754A (en]) * 1961-03-17 1963-05-08
US3343104A (en) * 1964-07-30 1967-09-19 Westinghouse Electric Corp Gate turn-off device driving a power switching semiconductor device
DE2801722A1 (de) * 1978-01-16 1979-07-19 Siemens Ag Schaltungsanordnung zum herabsetzen der freiwerdezeit eines thyristors
DE2825794C2 (de) * 1978-06-13 1986-03-20 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Abschaltbarer Thyristor
JPS5545274A (en) * 1978-09-26 1980-03-29 Hitachi Ltd Gate circuit of gate turn-off thyristor
DE7909286U1 (de) * 1979-03-31 1980-12-04 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt In einem gehaeuse angeordneter gate- ausschaltbarer thyristor, welchem zur steuerung des ausschaltstromes ein separates halbleiter-schaltelement zugeordnet ist
DE2945324A1 (de) * 1979-11-09 1981-05-21 Siemens AG, 1000 Berlin und 8000 München Thyristor mit verbessertem schaltverhalten
DE3018468A1 (de) * 1980-05-14 1981-11-19 Siemens AG, 1000 Berlin und 8000 München Thyristor mit steuerbaren emitterkurzschluessen und verfahren zu seinem betrieb
DE3018542A1 (de) * 1980-05-14 1981-11-19 Siemens AG, 1000 Berlin und 8000 München Thyristor mit steuerbarem emitter-kurzschluss und verfahren zu seinem betrieb

Also Published As

Publication number Publication date
JPS5951571A (ja) 1984-03-26
DE3230760A1 (de) 1984-02-23
EP0104390A1 (de) 1984-04-04
EP0104390B1 (de) 1987-04-08
DE3370900D1 (en) 1987-05-14
US4884114A (en) 1989-11-28

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